Adsorption of Atomic Oxygen (N2O) on Clean Silicon Surfaces and Its Influence on the Surface State Density; a Comparison with O2

摘要

The interaction of molecular oxygen (O2) and nitrous oxide (N2O) with the Si(100)2x1, (111)7x7 and (110)5x1 surfaces was studied in an ultrahigh vacuum system, the crystal temperature being 300 K, the gases being admitted into the reaction chamber at pressures ranging from 10 to the minus 8th power to 0.005 Torr. The geometric nature of the oxygen covered Si(100), (111) and (110) surfaces is described.