Nanolocalized charge writing in thin SiO2 layers with embedded silicon nanocrystals under an atomic force microscope probe

摘要

The possibility of temporally stable nanolocalized charging of thin SiO2 layers with embedded silicon nanocrystals (nc-Si) is demonstrated. The local charge writing and reading in SiO2 layers were performed using the electrostatic force microscopy (EFM) technique under the probe of an atomic force microscope. The nc-Si inclusions in a 12-nm-thick SiO2 layer were obtained using the implantation of low-energy (1 keV) Si+ ions, followed by annealing in a nitrogen atmosphere containing 1.5% oxygen. This regime of nc-Si formation significantly improved the structure of nanocrystalline inclusions, which ensured the charge localization on a record level and retention for a prolonged time: the diameter of charged regions in SiO2 layers with nc-Si inclusions did not exceed 35 nm, while the charge storage time reached tens of hours. The localized EFM charging can be used as a basis of the charge nanolithography on oxide layers.