Uncooled photodiodes based on InAsSb(P) with long-wavelength cut-off at λ = 5.8 μm

摘要

We have experimentally studied the parameters of room-temperature photodiodes based on gradient solid solutions of the InAsSb(P) system, having a long-wavelength cut-off at λ = 5.8 μm and various geometries of non-transparent contacts on the exposed p-InAsSb(P) surface. It is established that the sensitivity (photocurrent collection efficiency) strongly depends on the perimeter of this contact: photodiodes with net structure of this contact (increased perimeter and area) are characterized by increased sensitivity even despite greater degree of shadowing of the exposed surface by the contact.