1.5-1.8 mu m photoluminescence of MBE-grown HgCdTe films

摘要

The photoluminescence (PL) of HgCdTe films grown by molecular beam epitaxy (MBE) has been studied in the 1.5-1.8 mu m wavelength range. The post-growth annealing of samples for 20 h at 270 degrees C in an inert atmosphere leads to changes in the spectrum and intensity of luminescence. The spectral changes are related to an increasing homogeneity of the film composition in depth as a result of the mutual diffusion of alloy components. An increase in the room-temperature PL intensity is due to the improved structure of annealed films.