Diagnostics of degradation processes induced by pulsed electric signals at the aluminum-silicon interface

摘要

Thermal conditions in an aluminum metallization stripe deposited onto a single crystal silicon substrate have been studied during the passage of single rectangular electric pulse with a current density of j < 8 X 10(10) A/m(2), and a duration of tau = 100-1000 mu s. Based on the results of this analysis, a method of diagnostics of the state of metallization contact systems and determination of the conditions of their safe operation is proposed.