Modification of the Shape of Large Germanium Nanoislands on Silicon Surface by Low-Energy Ion Bombardment

摘要

Germanium nanoislands on silicon substrates were irradiated by hydrogen and argon ions with energies below 350 eV. In the initial stage, ion bombardment leads to the division of large islands into several small islands irrespective of the ion type. The resulting surface is more homogeneous than the initial and is stable with respect to further ion irradiation.