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首页> 外文期刊>Chemistry: A European journal >Sn20.5 square3.5As22I8:A Largely Disordered Cationic Clathrate with a New Type of Superstructure and Abnormally Low Thermal Conductivity
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Sn20.5 square3.5As22I8:A Largely Disordered Cationic Clathrate with a New Type of Superstructure and Abnormally Low Thermal Conductivity

机译:Sn20.5 square3.5As22I8:一种具有新型上层结构且导热系数异常低的阳离子型笼形大合物

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摘要

Sn20.5As22I8,a new cationic clathrate,has been prepared by using an ampoule technique.According to the X-ray powder diffraction data,it crystallizes in the face-centered cubic space group F23 or Fm3 with a unit-cell parameter of a=22.1837(4) A.Single-crystal X-ray data allowed solu tion of the crystal structure in the sub-cell with a unit-cell parameter of a0 = 11.092(1) A and the space group Pm3n(R = 5.7%).Sn20.5As22I8(or Sn20.5 square3.5As22I8,accounting for the vacancies in the framework) possesses the clathrate-I type crystal structure,with iodine atoms occupying the cages of the cationic framework composed of tin and arsenic atoms.The crystal structure is strongly disordered.The main features are a random distribution of vacancies,and shifts of the tin and arsenic atoms away from their ideal positions.The coordination of the tin atoms has been confirmed by using 119Sn Mossbauer spectroscopy.Electron diffraction and high-resolution electron microscopy (HREM) analyses have confirmed the presence of the superstructure ordering,which results in a doubling of the unit-cell parameter and a change of the space group from Pm3n to either F23 or Pm3.Analysis of the crystal structure has led to the construction of four ordering models for the superstructure,which have been corroborated by HREM,and has also led to the identification of disordered regions originating from overlap of the different types of ordered domains.Sn20.5As22I8 is a diamagnetic semiconductor with an estimated band gap of 0.45 eV;it displays abnormally low thermal conductivity,with the room temperature value being just 0.5 W m-1 K-1.
机译:采用安瓿技术制备了一种新型阳离子包合物Sn20.5As22I8。根据X射线粉末衍射数据,其结晶为面心立方空间群F23或Fm3,其晶胞参数为a = 22.1837(4)A.单晶X射线数据允许以a0 = 11.092(1)A的晶胞参数和空间群Pm3n(R = 5.7%)求解子晶胞中的晶体结构.Sn20.5As22I8(或Sn20.5 square3.5As22I8,占骨架中的空位)具有笼形I型晶体结构,碘原子占据了由锡和砷原子组成的阳离子骨架的骨架。主要特征是空位随机分布,锡和砷原子偏离其理想位置。锡原子的配位已通过119Sn Mossbauer光谱学证实。电子衍射和高分辨率电子显微镜(HREM)分析已确认上层结构有序性的存在导致单位晶胞参数加倍,空间群从Pm3n变为F23或Pm3。晶体结构的分析导致构造了上层结构的四个有序模型Sn20.5As22I8是一种抗磁半导体,其带隙估计为0.45 eV;显示异常低的热,并且得到了HREM的证实,并且还导致了对源自不同类型有序域重叠的无序区域的识别。电导率,室温值仅为0.5 W m-1 K-1。

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