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Differential phase-contrast dark-field electron holography for strain mapping

机译:差分相衬暗场电子全息术用于应变映射

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摘要

Strain mapping is an active area of research in transmission electron microscopy. Here we introduce a dark-field electron holographic technique that shares several aspects in common with both off-axis and in-line holography. Two incident and convergent plane waves are produced in front of the specimen thanks to an electrostatic biprism in the condenser system of a transmission electron microscope. The interference of electron beams diffracted by the illuminated crystal is then recorded in a defocused plane. The differential phase recovered from the hologram is directly proportional to the strain in the sample. The strain can be quantified if the separation of the images due to the defocus is precisely determined. The present technique has the advantage that the derivative of the phase is measured directly which allows us to avoid numerical differentiation. The distribution of the noise in the reconstructed strain maps is isotropic and more homogeneous. This technique was used to investigate different samples: a Si! SiGe superlattice, transistors with SiGe source/drain and epitaxial PZT thin films. (C) 2015 Elsevier BY. All rights reserved.
机译:应变映射是透射电子显微镜研究的活跃领域。在这里,我们介绍了一种暗场电子全息技术,该技术与离轴全息技术和在线全息技术都有一些共同点。由于透射电子显微镜的聚光镜系统中的静电双棱镜,在样品前产生了两个入射平面和会聚平面波。然后,由照明晶体衍射的电子束的干涉被记录在散焦平面中。从全息图恢复的微分相位与样品中的应变成正比。如果精确确定由于散焦而导致的图像分离,则可以量化应变。本技术的优点在于直接测量相位的导数,这使我们避免了数值微分。重建的应变图中的噪声分布是各向同性的,并且更加均匀。该技术用于研究不同的样本:Si! SiGe超晶格,具有SiGe源/漏和外延PZT薄膜的晶体管。 (C)2015 Elsevier BY。版权所有。

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