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首页> 外文期刊>Chemistry, an Asian journal >Extended Conjugated Donor-Acceptor Molecules with E-(1,2-Difluorovinyl) and Diketopyrrolopyrrole (DPP) Moieties toward High-Performance Ambipolar Organic Semiconductors
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Extended Conjugated Donor-Acceptor Molecules with E-(1,2-Difluorovinyl) and Diketopyrrolopyrrole (DPP) Moieties toward High-Performance Ambipolar Organic Semiconductors

机译:E-(1,2-二氟乙烯基)和二酮吡咯并吡咯(DPP)部分的共轭给体-受体分子向高性能双极性有机半导体的扩展

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摘要

Two diketopyrrolopyrrole (DPP)-based donor-acceptor (D-A) conjugated molecules, DPP-F and DPP-2F, which contain E-(1,2-difluorovinyl) moieties, are reported. The LUMO energies of DPP-F and DPP-2F were estimated to be -3.49 and -3.70 eV, respectively, based on their redox potentials and absorption spectral data; these values were clearly lowered because of the incorporation of electron-withdrawing E-(1,2-difluorovinyl) moieties. Organic field-effect transistors (OFETs) with thin films of DPP-F and DPP-2F were successfully fabricated with conventional techniques. Based on the respective transfer and output characteristics measured in an inert atmosphere, thin films of DPP-2F display ambipolar semiconducting behavior with hole and electron mobilities reaching 0.42 and 0.80 cm~2V~(-1) s~(-1), respectively. The as-prepared OFET of DPP-2F already shows high hole and electron mobilities that are not influenced remarkably by thermal annealing. For thin films of DPP-F, only p-type semiconducting behavior was observed in both an inert atmosphere and air, and the hole mobility increased to 0.1 cm~2V~(-1)s~(-1) after thermal annealing. XRD and AFM studies were performed with thin films of DPP-F and DPP-2F after annealing at different temperatures.
机译:报道了两个基于二酮吡咯并吡咯(DPP)的供体-受体(D-A)共轭分子,DPP-F和DPP-2F,其中包含E-(1,2-二氟乙烯基)部分。基于它们的氧化还原电势和吸收光谱数据,DPP-F和DPP-2F的LUMO能量分别估计为-3.49和-3.70 eV。由于引入了吸电子的E-(1,2-二氟乙烯基)部分,这些值明显降低。用常规技术成功地制造了具有DPP-F和DPP-2F薄膜的有机场效应晶体管(OFET)。根据在惰性气氛中测得的各自的传输和输出特性,DPP-2F薄膜显示出双极性半导体行为,空穴和电子迁移率分别达到0.42和0.80 cm〜2V〜(-1)s〜(-1)。所制备的DPP-2F的OFET已经显示出高的空穴迁移率和电子迁移率,不受热退火的明显影响。对于DPP-F薄膜,在惰性气氛和空气中均仅观察到p型半导体行为,热退火后空穴迁移率增加至0.1 cm〜2V〜(-1)s〜(-1)。在不同温度下退火后,对DPP-F和DPP-2F薄膜进行XRD和AFM研究。

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