Crystalline silicon on glassinterface passivation and absorber material quality

摘要

Thin crystalline silicon solar cells prepared directly on glass substrates by means of liquid-phase crystallization of the absorber utilize only a small fraction of the silicon material used by standard wafer-based silicon solar cells. The material consists of large crystal grains of up to square centimeter area and results in solar cells with open-circuit voltages of 650mV, which is comparable with results achieved with multi-crystalline silicon wafers. We give a brief status update and present new results on the electronic interface and bulk properties. The interrelation between surface passivation and additional hydrogen plasma passivation is investigated for p-type and n-type absorbers with different doping concentrations. Internal quantum efficiency measurements from both sides on bifacial solar cells are used to extract the bulk-diffusion length and surface-recombination velocity. Finally, we compare various types of solar cell devices based on 10 mu m thin crystalline silicon, where conversion efficiencies of 11-12% were achieved with p-type and n-type liquid-phase crystallized absorbers on glass. Copyright (c) 2015 John Wiley & Sons, Ltd.