Diode Characteristics in State-of-the-Art ZnO/CdS/Cu(In_(1-_x)Ga_x)Se_2 Solar Cells

摘要

We report a new state of the art in thin-film polycrystalline Cu(In,Ga)Se_2-based solar cells with the attainment of energy conversion efficiencies of 19-5 percent. An analysis of the performance of Cu(In,Ga)Se_2 solar cells in terms of some absorber properties and other derived diode parameters is presented. The analysis reveals that the highest-performance cells can be associated, with absorber bandgap values of approx l.14eV, resulting in devices with the lowest values of diode saturation current density ( approx 3 X 10~(-8) mA/cm~2) and diode quality factors in the range 1-30 < A 20 percent in thin-film polycrystalline Cu(In,Ga)Se_2 solar cells. Published in 2005 by John Wiley & Sons, Ltd.