An approach to the measurement of shunt resistance of individual subcells in thin-film tandem devices

摘要

In this paper, the selective illumination approach is adopted to separately extract the shunt resistance of the individual subcells belonging to a tandem cell. The method relies on simple theoretical considerations and is based on the measurement of the current-voltage characteristic of the tandem cell by alternately keeping one of the subcells under dark conditions. Numerical simulations are employed to support the reliability of the technique, which is experimentally tested on micromorph devices deposited onto glass covered by a V-shaped transparent conducting oxide and subject to different thermal treatments. Copyright (C) 2013 John Wiley & Sons, Ltd.