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首页> 外文期刊>Plating & Surface Finishing >Hard Chromium Plating From Trivalent Chromium Solution
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Hard Chromium Plating From Trivalent Chromium Solution

机译:用三价铬溶液镀硬铬

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摘要

A new trivalent chromium process has been developed that allows a sustained deposition reaction at a high rate for more than 20 hours and provides a deposit with a thickness of 450 microns and hardnesses of up to 1200 Vickers. The effects of chromium concentration, a number of carboxylic acids, a group of buffers, temperature and solution pH on deposition rate, deposit thickness and the ability to plate continuously have been investigated. We propose that normal growth of the trivalent chromium deposit would gradually diminish to either an unacceptably low rate or a complete termination as a result of increasing pH, followed by the formation and precipitation of a series of Cr(III) hydroxides on the cathode surface. The key to the success of this plating process lies in the use of carboxylic acids as complexing agents to promote the chromium deposition reaction, and a group of buffers-including boric acid, aluminum salt and another carboxylic acid-to keep the solution pH sufficiently stable within a certain range, hereby preventing the precipitation of chromium hydroxides on the cathode surface. Ion exchange membranes must be used to separate the anode from the cathode compartment and to prevent oxidation of solution constituents at the anode. They also maintain the stability of the solution constituents and sustain a high rate of deposition over a prolonged period. The hardness of the deposit can be greatly increased after heat treatment in a suitable temperature range.
机译:已经开发出一种新的三价铬工艺,该工艺可使金属以高速率持续进行沉积反应超过20小时,并提供厚度为450微米,硬度高达1200维氏硬度的沉积物。研究了铬浓度,多种羧酸,一组缓冲液,温度和溶液pH对沉积速率,沉积厚度和连续镀覆能力的影响。我们建议,由于pH值升高,三价铬沉积物的正常生长会逐渐降低至不可接受的低速率或完全终止,随后在阴极表面形成和沉淀一系列Cr(III)氢氧化物。电镀工艺成功的关键在于使用羧酸作为络合剂以促进铬沉积反应,并使用一组缓冲液(包括硼酸,铝盐和另一种羧酸)以保持溶液的pH足够稳定在一定范围内,由此防止氢氧化铬在阴极表面上的沉淀。必须使用离子交换膜将阳极与阴极室分开,并防止阳极上溶液成分的氧化。它们还保持溶液成分的稳定性,并在长时间内保持较高的沉积速率。在合适的温度范围内进行热处理后,沉积物的硬度可以大大提高。

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