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Triple phase structure and electron density analysis of the thermoelectric material Bi_(80)Sb_(20)

机译:热电材料Bi_(80)Sb_(20)的三相结构和电子密度分析

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摘要

The thermoelectric material Bi_(80)Sb_(20) was grown by high temperature melt-quench growth method and characterized by powder XRD. The Rietveld refinements revealed the presence of Bi_(80)Sb_(20) and also the elemental parents Bi and Sb. All the three phases were analyzed and the electron density distribution and local structure of Bi, Sb and Bi_(80)Sb_(20) were individually studied. The bonding between the atoms was studied using maximum entropy method (MEM). A comparison of 3D and 2D electron density distributions of Bi, Sb and Bi_(80)Sb_(20) on the (110) and (024) planes clearly shows highly concentrated and localized electron clouds in Bi_(80)Sb_(20) supporting the use of BiSb alloy as a thermoelectric material.
机译:热电材料Bi_(80)Sb_(20)通过高温熔融淬火生长法生长,并通过粉末XRD表征。 Rietveld的改进表明存在Bi_(80)Sb_(20)以及元素双亲Bi和Sb。分析了所有三个相,并分别研究了Bi,Sb和Bi_(80)Sb_(20)的电子密度分布和局部结构。使用最大熵方法(MEM)研究原子之间的键合。 Bi,Sb和Bi_(80)Sb_(20)在(110)和(024)平面上的3D和2D电子密度分布的比较清楚地显示Bi_(80)Sb_(20)支撑中高度集中和局部的电子云使用BiSb合金作为热电材料。

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