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Correlation of residual stress and adhesion on copper by the effect of chemical structure of polyimides for copper-clad laminates

机译:覆铜箔层压板聚酰亚胺化学结构对铜残余应力和附着力的影响

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BACKROUND: Polyimide films coated on copper are a potential new substrate for fabricating printed circuit boards; however, adhesion between the copper and polyimide films is often poor. The relations between residual stress and adhesion strength according to the development of molecular orientation of polyimide films with different chemical backbone structure coated on copper were studied. RESULTS: The effect of chemical structures on properties including the residual stress and the adhesion strength were widely investigated for four different polyimides. Diamine 4,4'-oxydianiline (ODA) and dianhydrides 1,2,4,5-benzenetetracarboxylic dianhydride (PMDA), 4'-(hexafluoroisopropylidene)diphthalic anhydride (6FDA), 4,4'-oxydiphthalic anhydride (ODPA) and 3,3',4,4'-benzophenone tetracarboxylic dianhydride (BTDA) were used to synthesize polyimide. In an attempt to quantify the interaction of thermal mismatch with the polyimide films depending on various structures, residual stress experiments between polyimide film and Cu-Si wafer were carried out over a range of 25-400 degrees C using in situ thin film stress analysis. A universal test machine was used to conduct 180 degrees peel test (ASTM D903-98) of polyimide film from cooper foil. The residual stress on Cu-Si (100) wafer decreased in the order 6FDA-ODA > BTDA-ODA > ODPA-ODA > PMDA-ODA, and the interfacial adhesion strength decreased in the order BTDA-ODA (5 N mm(-2)) > ODPA-ODA > PMDA-ODA > 6FDA-ODA. The results may suggest that the morphological structure, degree of crystallinity of chain orientation and packing significantly relate to the residual stress and adhesion strength in polyimide films. Wide-angle X-ray diffraction was used for characterizing the molecular order and orientation and X-ray photoelectron spectroscopy was used for the analysis of components on copper after polyimide films were detached to confirm the existence of copper oxide chemical bonding and to measure the binding energy of elements on the copper surface. CONCLUSION: In this research, it is demonstrated that BTDA-ODA polyimide has a low residual stress to copper, good adhesion property, good thermal property and low dielectric constant. Therefore, BTDA-ODA would be expected to be a promising candidate for a two-layer copper-clad laminate. (C) 2007 Society of Chemical Industry
机译:背景:涂在铜上的聚酰亚胺薄膜是制造印刷电路板的潜在新基材。然而,铜和聚酰亚胺膜之间的粘合性通常较差。研究了不同化学骨架结构的铜包覆的聚酰亚胺薄膜的分子取向发展对残余应力与附着强度的关系。结果:广泛研究了四种不同聚酰亚胺的化学结构对性能的影响,包括残余应力和粘附强度。二胺4,4'-氧二苯胺(ODA)和二酐1,2,4,5-苯四甲酸二酐(PMDA),4'-(六氟异亚丙基)二邻苯二甲酸酐(6FDA),4,4'-氧二邻苯二甲酸酐(ODPA)和3用3,3,4,4'-二苯甲酮四羧酸二酐(BTDA)合成聚酰亚胺。为了量化取决于各种结构的热失配与聚酰亚胺膜的相互作用,使用原位薄膜应力分析在25-400摄氏度的范围内进行了聚酰亚胺膜和Cu-Si晶片之间的残余应力实验。使用通用测试机对铜箔上的聚酰亚胺薄膜进行180度剥离测试(ASTM D903-98)。 Cu-Si(100)晶片上的残余应力按6FDA-ODA> BTDA-ODA> ODPA-ODA> PMDA-ODA的顺序降低,界面粘合强度按BTDA-ODA(5 N mm(-2 ))> ODPA-ODA> PMDA-ODA> 6FDA-ODA。结果表明,聚酰亚胺薄膜的形态结构,链取向和堆积的结晶度与残余应力和粘附强度显着相关。广角X射线衍射用于表征分子顺序和取向,X射线光电子能谱用于分析剥离聚酰亚胺膜后铜上的成分,以确认氧化铜化学键的存在并测量键合铜表面元素的能量。结论:本研究表明,BTDA-ODA聚酰亚胺对铜的残余应力低,附着力好,热性能好,介电常数低。因此,有望将BTDA-ODA用作两层覆铜层压板的有前途的候选材料。 (C)2007年化学工业学会

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