Effect of the ion impact on the structure of boron nitride films prepared by plasma enhanced chemical vapour deposition

摘要

Boron nitride films have been deposited by a plasma enhanced chemical vapour deposition (PECVD) method from a mixture of BF3 and NH3 gases. The hexagonal phase of boron nitride was generated when no self-bias was applied to the substrate. The volume fraction of the hexagonal phase of the boron nitride film decreased as the negative serf-bias of the substrate electrode increased. Ions, such as BF2+, accelerated by the negative self-bias to the substrate are thought to break down the hexagonal phase. Ion impact on the growth surface also had the effect of inactivating the films by removing weakly bonded atoms. [References: 11]