Current-voltage and capacitance-voltage characteristics of the ITO/polyaniline doped boron trifloride/Al Schottky diode

摘要

The electrical characteristics of the ITO/polyaniline (PANI) doped boron trifloride (BF{sub}3)/Al Schottky diode have been investigated by current-voltage (I-V) and capacitance-voltage (C-V) methods. The diode indicates a rectification behavior with the ideality factor of 4.78. An ideality factor higher than unity can result from the interface state and electronic properties of the PANI doped BF{sub}3 organic semiconductor. The barrier height of the diode was determined from both I-V and C-V characteristics. The barrier height obtained from the C-V measurements is higher than that obtained from the I-V measurements. At higher forward bias voltages, the space charge-limited current is the dominant transport mechanism, whereas at reverse bias voltages, the current flow in the ITO/PANIBF{sub}3/Al diode is controlled by Schottky emission mechanism.