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Characterization and Charge Transfer Mechanism of PIN-CdSe Nanocomposites

机译:PIN-CdSe纳米复合材料的表征与电荷转移机理

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This paper reports structural, thermal, and temperature-dependent dielectric properties of polyindole-cadmium selenide (PIN-CdSe) nanocomposites. PIN and its nanocomposites were synthesized via in situ chemical oxidative polymerization method. Samples were characterized by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), scanning electron microscopy with energy dispersive X-ray (SEM/EDX), atomic force microscope, differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA). Dielectric properties were analyzed as a function of temperature. FT-IR spectroscopy indicated that both N-H and aromatic C=C bonds were affected more by doping process. Significant structural differences were observed in XRD and SEM analyses of PIN and its nanocomposites. Both XRD and DSC measurements revealed that crystallinity of the PIN increases to a certain degree with increasing doping level. Thermogravimetric analysis showed that addition of CdSe decreased degradation temperature of the PIN. Conductivity measurements investigated by universal power law indicated that the charge transport mechanism of all the samples is consistent with correlated barrier hopping model. (C) 2015 Society of Plastics Engineers
机译:本文报道了聚吲哚-硒化镉(PIN-CdSe)纳米复合材料的结构,热和温度相关介电性能。 PIN及其纳米复合材料通过原位化学氧化聚合法合成。样品通过傅里叶变换红外光谱(FT-IR),X射线衍射(XRD),具有能量色散X射线的扫描电子显微镜(SEM / EDX),原子力显微镜,差示扫描量热法(DSC)和热重分析进行表征(TGA)。介电性能作为温度的函数进行了分析。 FT-IR光谱表明,掺杂过程对N-H和芳族C = C键的影响更大。在PIN及其纳米复合材料的XRD和SEM分析中观察到了显着的结构差异。 XRD和DSC测量均表明PIN的结晶度随掺杂水平的提高而增加到一定程度。热重分析表明,添加CdSe可以降低PIN的降解温度。通用功率定律对电导率的测量结果表明,所有样品的电荷迁移机理与相关的势垒跳跃模型是一致的。 (C)2015年塑料工程师学会

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