Charge Transfer Mechanism of Gallium Nitrite/Reduced Graphene Oxide (GaN/rGO) Nanocomposite

摘要

An in-situ chemical reduction method was followed to produce reduced graphene oxide/gallium nitride (rGO/GaN) nanocomposites using GaN powder and graphene oxide as raw materials. The morphological, structural, chemical bonding, optical properties, chemical bonding network and compositional analysis were performed using SEM, XRD, FTIR, UV-Vis, Raman and XPS spectroscopy respectively. The particle size and crystallite size of the rGO/GaN nanocomposite were calculated as 152-207 nm and 31.7 nm respectively. The Raman spectra of rGO/GaN nanocomposite reveal a blue shift of 3.18 cm^-1 of the E2 (high) peak of GaN. Electrical properties of rGO/GaN nanocomposites coated over Indium Tin Oxide were analyzed with current-voltage characterization. The nanocomposite shows diode characteristics at a higher voltage in the forward and reverses bias. Moreover, a very low leakage currents up to the cut off voltage 1V was observed in the reverse bias.