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Interfacial Charge Transfer and Enhanced Photocatalytic Mechanisms for the Hybrid Graphene/Anatase TiO2(001) Nanocomposites

机译:石墨烯/锐钛矿型TiO2(001)纳米复合材料的界面电荷转移和增强的光催化机理

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In this paper, first-principle calculations based on density functional theoiy were carried out to explore the interface properties of the hybrid graphene/anatase TiO2 (001) nanocomposites (G/AT(001)N). The effect of graphene hybridization on energy gap, surface chemical bonding, interfacial charge transfer, and visible light response was investigated in detail. Because of the hybridization of graphene, the band structure of the G/AT(001)N was modified, and the energy gap was reduced to 0.47 eV. Electrons in the bottom of the valence band (VB) of anatase TiO2 could disperse to the upper part of the VB. And electrons in the upper part of the VB of anatase TiO2 were likely to be directly excited to graphene under visible light irradiation, which promoted the formation of well-separated electron—hole pairs. The interfacial electron transfer in the ground electronic state promoted electrons increased on graphene and substantial holes accumulated in TiO2(001) facet. Good linkage between TiO2(001) facet and graphene could facilitate the charge transfer, promoting photocatalytic efficiency improvement. Hybridization of graphene brought an obvious red shift in the absorption edge and enhanced absorption intensity in the visible region, which indicated the enhancement of photocatalytic performance. The calculation results illustrated the reported experimental observation [J. Phys, Chem. Lett. 2011, 2, 894—899] and would provide new insights into the design of graphene-based semiconductor photo catalysts.
机译:本文基于密度泛函理论进行了第一性原理计算,以探索石墨烯/锐钛矿型TiO2(001)纳米复合材料(G / AT(001)N)的界面性能。详细研究了石墨烯杂交对能隙,表面化学键,界面电荷转移和可见光响应的影响。由于石墨烯的杂交,G / AT(001)N的能带结构被修改,并且能隙减小到0.47eV。锐钛矿型TiO2价带(VB)底部的电子可能扩散到VB的上部。锐钛矿型TiO2 VB上部的电子很可能在可见光照射下直接被石墨烯激发,从而促进了电子-空穴对的良好分离。在基态电子状态下的界面电子转移促进了石墨烯上电子的增加,并且在TiO2(001)面上积累了大量空穴。 TiO2(001)刻面与石墨烯之间的良好键合可以促进电荷转移,从而促进光催化效率的提高。石墨烯的杂交使吸收边缘出现明显的红移,并在可见光区域增强了吸收强度,表明光催化性能的增强。计算结果说明了所报道的实验观察[J.物理化学。来吧2011,2,894—899],将为石墨烯基半导体光催化剂的设计提供新的见解。

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