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Dielectric and conduction properties of polyimide/silica nano-hybrid films

机译:聚酰亚胺/二氧化硅纳米杂化膜的介电和导电性能

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摘要

Dielectric and conduction properties of polyimide/silica nano-hybrid films were investigated with the silica content and the testing frequency, using a small electrode system. The hybrid films were prepared through sol-gel process and thermal imidization, by using pyromellitic dianhydride and 4,4'-oxydianiline as polyimide precursors, and tetraethoxysilane and methyltriethoxy-silane as silica precursors. The dielectric coefficient of PI/SiO2 films was monotonically increased with increasing silica content, and decreased with increasing testing frequency. The dielectric loss of PI/SiO2 films had no obvious changes with increasing silica content, but monotonically increased with increasing testing frequency. These can be contributed to the different quantity and migration chunnels of current carriers, which were mainly influenced by a few of complicated factors. There were remarkable differences between conduction property of PI/TEOS-SiO2 films and PI/MTEOS-SiO2 films because of the different size and dispersion status of silica particles in the polyimide matrix.
机译:使用小型电极系统,利用二氧化硅含量和测试频率研究了聚酰亚胺/二氧化硅纳米杂化膜的介电和导电性能。通过均苯四甲酸二酐和4,4'-氧二苯胺作为聚酰亚胺前体,并以四乙氧基硅烷和甲基三乙氧基-硅烷为二氧化硅前体,通过溶胶-凝胶工艺和热酰亚胺化制备杂化膜。 PI / SiO2薄膜的介电系数随二氧化硅含量的增加而单调增加,随测试频率的增加而降低。 PI / SiO2薄膜的介电损耗不随二氧化硅含量的增加而变化,而随测试频率的增加而单调增加。这些可能会导致当前航母的数量和迁移渠道不同,这主要受一些复杂因素的影响。 PI / TEOS-SiO2薄膜与PI / MTEOS-SiO2薄膜的导电性能存在显着差异,这是由于二氧化硅颗粒在聚酰亚胺基质中的尺寸和分散状态不同。

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