首页> 外文期刊>Polyhedron: The International Journal for Inorganic and Organometallic Chemistry >Symmetrical and unsymmetrical nickel(II) complexes of N-(dialkylcarbamothioyl)-nitro substituted benzamide as single-source precursors for deposition of nickel sulfide nanostructured thin films by AACVD
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Symmetrical and unsymmetrical nickel(II) complexes of N-(dialkylcarbamothioyl)-nitro substituted benzamide as single-source precursors for deposition of nickel sulfide nanostructured thin films by AACVD

机译:N-(二烷基氨基甲硫酰基)-硝基取代的苯甲酰胺的对称和不对称镍(II)络合物作为单源前驱体,用于通过ACVD沉积硫化镍纳米结构薄膜

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摘要

The nickel(II) complexes of various N-(dialkylcarbamothioyl)-nitro substituted benzamides [dialkyl= di-propyl (2a); hexyl, methyl (2b); butyl, ethyl (2c); ethyl, isopropyl (2d)] have been synthesized and characterized by elemental analysis, I.R. spectroscopy, H-1 NMR and atmospheric pressure chemical ionization-mass spectrometry. The molecular structures of the complexes 2a and 2d were determined by single-crystal X-ray diffraction. Thermogravimetric analysis shows that complexes 2a-c decompose in a single step and complex 2d decomposes in two-steps to give a final residue corresponding to nickel sulfides. These complexes were used as single-source precursors for the deposition of nickel sulfide thin films by aerosol assisted chemical vapor deposition at 723 K. Powder X-ray diffraction patterns of the thin films deposited from complexes 2a and 2c showed the deposition of the hexagonal NiS phase with spherical crystallites. The films deposited from complex 2b showed hexagonal and rhombohedral systems of the millerite NiS phase. The degree of the surface roughness of the films was determined by atomic force microscopy. Scanning electron microscopy and energy dispersive X-ray analysis results showed a uniform distribution of nickel sulfide in the films, which makes them potentially useful semiconducting materials on a structured surface. (C) 2014 Elsevier Ltd. All rights reserved.
机译:各种N-(二烷基氨基甲硫基)-硝基取代的苯甲酰胺的镍(II)配合物[二烷基=二丙基(2a);己基,甲基(2b);丁基,乙基(2c);乙基,异丙基(2d)]已合成并通过元素分析I.R.光谱,H-1 NMR和大气压化学电离质谱。配合物2a和2d的分子结构通过单晶X射线衍射确定。热重分析表明,配合物2a-c在一个步骤中分解,而配合物2d在两步中分解,从而给出了对应于硫化镍的最终残留物。这些络合物用作通过气溶胶辅助化学气相沉积在723 K上沉积硫化镍薄膜的单源前驱体。从络合物2a和2c沉积的薄膜的粉末X射线衍射图谱显示六角形NiS的沉积球形微晶相。由络合物2b沉积的薄膜显示出镍矿NiS相的六方和菱面体体系。膜的表面粗糙度通过原子力显微镜法测定。扫描电子显微镜和能量色散X射线分析结果表明,硫化镍在薄膜中的分布均匀,这使其在结构化表面上可能成为有用的半导体材料。 (C)2014 Elsevier Ltd.保留所有权利。

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