Some results of the growth of semiconductor crystals in microgravity conditions (to the 50th anniversary of Yuri Gagarin's flight into space)

摘要

The history of the growth of semiconductor crystals aboard space vehicles and their subsequent investigation has been described shortly. It has been shown using Ge(Ga), GaSb(Si), and GaSb(Te) crystals as an example that the formation of segregation growth striations can be avoided during their recrystallization by the vertical Bridgman method in conditions of physical simulation of microgravity on the Earth, mainly due to the essential weakening of the thermal gravitation convection. By their structure and impurity distribution, they approach the crystals grown in space. The investigation of recrystallization of Te has made it possible to determine the role of the detachment effect characteristic of the microgravity conditions and the features of the microstructure of the samples that crystallize with a free surface. The analysis of the results obtained from experiments in space allows us to better understand the processes occurring during the crystallization of the melts and to improve the crystal growth in terrestrial conditions.