Influence of defects in a silicon dioxide thin layer on the processes of silicidation in the Fe/SiO2/Si(001) system

摘要

The kinetics of the evolution of the structure and phase composition of the Fe/SiO2/Si(001) system under different conditions for deposition of the iron layer and subsequent annealing is considered. It is established that the SiO2 thin layer (similar to 1 nm) is not destroyed during iron deposition over a wide temperature range from 20 to 650A degrees C. As a result, iron films with different morphologies are formed on the surface of the oxide. Annealing leads to the destruction of the SiO2 layer at defect sites. This brings about the interaction of iron atoms with the silicon substrate and subsequent formation of iron silicides.