Electrodynamic properties of nanoporous silicon in the range from terahertz to infrared frequencies

摘要

The dielectric response (conductivity and permittivity) spectra of a series of nanoporous silicon samples prepared by anodization of low-resistivity single-crystal silicon are measured, for the first time, using terahertz and IR spectroscopy in the frequency range 7-4000 cm(-1) at room temperature. The spectra obtained are analyzed in terms of the effective medium theory with a size-dependent dielectric response function of nanoinclusions and averaged dielectric characteristics of the surrounding medium. The geometric and dielectric characteristics of silicon nanoinclusions are determined. The dielectric properties of inclusions are found to be affected by nanosize effects, namely, carrier scattering at crystallite boundaries and a broadening of he band gap due to quantum confinement. The spectra of the samples prepared by adding iodine to the electrolyte exhibit a resonance at frequencies of 150-300 cm(-1). The nature of the resonance can be associated with the presence of chemisorbed iodine on the surface of porous silicon. Possible mechanisms responsible for the changes in broadband conductivity and permittivity spectra of single-crystal silicon upon transformation into a nanoporous structure are discussed.