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Analysis of the memory effect in a nitrogen-filled tube at 6.6 mbar pressure for different cathode materials using the time delay method

机译:使用时间延迟方法分析在6.6 mbar压力下充氮管中不同阴极材料的记忆效应

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摘要

The memory effect, due to postafterglow survival of some species which affect subsequent breakdown, was analyzed from the behavior of memory curves. In early afterglow, up to several tens of a millisecond, the memory effect in nitrogen is a consequence of the presence of positive ions formed by the collision between metastable molecules and highly vibrationally excited molecules remaining from the previous discharge. In late afterglow, the memory effect is due to N(S-4) atoms created during the previous discharge and in early afterglow. When the atom density is reduced enough the breakdown is initiated by cosmic rays which always exists. In late afterglow in nitrogen the memory effect is very sensitive on cathode material. (C) 2004 American Institute of Physics.
机译:从记忆曲线的行为分析了由于某些物种的余辉后存活而影响后续分解的记忆效应。在余辉的早期(长达几十毫秒),氮气中的记忆效应是由于亚稳态分子与先前放电后残留的高度振动激发的分子之间的碰撞而形成的正离子的结果。在余辉的后期,记忆效应是由于先前放电和余辉早期产生的N(S-4)原子引起的。当原子密度降低到足够低时,击穿是由始终存在的宇宙射线引发的。在氮气的余辉中,记忆效应对阴极材料非常敏感。 (C)2004年美国物理研究所。

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