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首页> 外文期刊>Physical review, B >Charge transport perpendicular to the high mobility plane in organic crystals: Bandlike temperature dependence maintained despite hundredfold anisotropy
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Charge transport perpendicular to the high mobility plane in organic crystals: Bandlike temperature dependence maintained despite hundredfold anisotropy

机译:垂直于有机晶体中高迁移率平面的电荷传输:尽管具有数百倍的各向异性,但仍保持带状温度依赖性

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Charge carrier mobility in van der Waals bonded organic crystals is strongly dependent on the transfer integral between neighboring molecules, and therefore the anisotropy of charge transport is determined by the molecular arrangement within the crystal lattice. Here we report on temperature dependent transport measurements along all three principal crystal directions of the same rubrene single crystals of high purity. Hole mobilities are obtained from the carrier transit time measured with high-frequency admittance spectroscopy perpendicular to the molecular layers (mu(c)) and from the transfer characteristics of two field-effect transistor (FET) structures oriented perpendicularly to each other in the layers (mu(a) and mu(b)). While the measurements of the field-effect channels confirm the previously reported high mobility and anisotropy within the ab plane, we find the mobility perpendicular to the molecular layers in the same crystals to be lower by about two orders of magnitude (mu(c) similar to 0.2 cm(2)/Vs at 300 K). Although the bandwidth is vanishingly small along the c direction and the transport cannot be coherent, we find mu(c) to increase upon cooling. We show that the delocalization within the high mobility ab plane prevents the formation of small polarons and leads to the observed "bandlike" temperature dependence also in the direction perpendicular to the molecular layers, despite the incoherent transport mechanism.
机译:范德华键合有机晶体中的载流子迁移率在很大程度上取决于相邻分子之间的转移积分,因此电荷传输的各向异性由晶格内的分子排列决定。在这里,我们报告了沿相同纯度的红宝石单晶的所有三个主要晶体方向的温度依赖性传输测量。空穴迁移率是通过垂直于分子层(mu(c))的通过高频导纳光谱法测量的载流子传输时间以及从垂直于分子层的两个场效应晶体管(FET)结构的传输特性获得的(mu(a)和mu(b))。尽管场效应通道的测量结果证实了先前报道的ab平面内的高迁移率和各向异性,但我们发现垂直于同一晶体中分子层的迁移率大约降低了两个数量级(mu(c)至300 K时为0.2 cm(2)/ Vs)。尽管带宽沿c方向几乎消失了,并且传输无法连贯,但我们发现mu(c)在冷却时会增加。我们显示高迁移率ab平面内的离域阻止了小极化子的形成,并且尽管存在不连贯的传输机制,但在垂直于分子层的方向上也导致了观察到的“带状”温度依赖性。

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