首页>
外国专利>
Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy
Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy
展开▼
展开▼
页面导航
摘要
著录项
相似文献
摘要
A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of Co
展开▼