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首页> 外文期刊>Physical review, B >Metal-insulator transition and pseudogap in Bi1.76Pb0.35Sr1.89CuO6+delta high-T-c cuprates
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Metal-insulator transition and pseudogap in Bi1.76Pb0.35Sr1.89CuO6+delta high-T-c cuprates

机译:Bi1.76Pb0.35Sr1.89CuO6 +δ高T-c铜酸盐中的金属-绝缘体转变和拟间隙

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摘要

It is inferred from bulk-sensitive muon Knight shift measurement for a Bi1.76Pb0.35Sr1.89CuO6+delta single-layer cuprate that the metal-insulator (MI) transition (in the low-temperature limit, T -> 0) occurs at the critical hole concentration P = PMI = 0.09(1), where the electronic density of states (DOS) at the Fermi level is reduced to zero by the pseudogap irrespective of the Neel order or spin glass magnetism. Superconductivity also appears for P > PMI, suggesting that this feature is controlled by the MI transition. More interestingly, the magnitude of the DOS reduction induced by the pseudogap remains unchanged over a wide doping range (0.1 <= p <= 0.2), indicating that the pseudogap remains as a hallmark of the MI transition for P > PMI.
机译:从Bi1.76Pb0.35Sr1.89CuO6 +δ单层铜酸盐的体敏μ子Knight位移测量可以推断,金属-绝缘体(MI)的转变(在低温极限下,T-> 0)发生在临界空穴浓度P = PMI = 0.09(1),其中费米能级的态电子密度(DOS)通过伪间隙降低到零,而与Neel阶数或自旋玻璃磁性无关。对于P> PMI,也会出现超导电性,表明此功能由MI过渡控制。更有趣的是,由伪间隙引起的DOS降低的幅度在很宽的掺杂范围内(0.1 <= p <= 0.2)保持不变,这表明伪间隙仍然是P> PMI的MI转变的标志。

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