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首页> 外文期刊>Physica, E. Low-dimensional systems & nanostructures >Effect of post-annealing temperature on nano-structure and energy band gap of indium tin oxide (ITO) nano-particles synthesized by polymerizingcomplexing solgel method
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Effect of post-annealing temperature on nano-structure and energy band gap of indium tin oxide (ITO) nano-particles synthesized by polymerizingcomplexing solgel method

机译:后退火温度对聚合络合溶胶凝胶法合成铟锡氧化物(ITO)纳米粒子的纳米结构和能带隙的影响

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In this paper, we report on the structural, microstructural and optical properties of nano-crystalline indium tin oxide (ITO) particle, which has been synthesized by solgel process using a simple starting hydro-alcoholic solution consisting of In(NO_3)_3.5H_2O, SnCl _4.5H_2O, citric acid as complexing and ethylene glycol as polymerization agents. The structural properties of indium tin oxide nano-powders annealed at different temperatures (T=350650 °C) have been characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses. The XRD patterns show In_2O_3-cubic phase in nano-powders without any indication of crystalline SnO_x as an additional phase. The TEM images show the nano-particles as nearly spherical shaped with size in the range of 1045 nm as the size of grains increases by increasing the annealing temperatures. The optical direct band gap of ITO nano-particles was calculated to be about 3.394.02 eV in the temperature range 350650 °C by optical absorption measurements. The optical band gap shifts to a higher energy with increasing annealing temperature is due to the improvement of the crystallinity, thereby increasing the carrier concentration as determined from the BursteinMoss effect.
机译:在本文中,我们报告了通过溶胶凝胶法使用由In(NO_3)_3.5H_2O组成的简单起始醇溶液通过溶胶凝胶法合成的纳米晶铟锡氧化物(ITO)颗粒的结构,微结构和光学性质。 ,SnCl _4.5H_2O,柠檬酸作为络合剂,乙二醇作为聚合剂。通过X射线衍射(XRD)和透射电子显微镜(TEM)分析表征了在不同温度(T = 350650°C)退火的铟锡氧化物纳米粉体的结构性能。 XRD图谱显示了纳米粉末中的In_2O_3-立方相,没有任何晶体SnO_x作为附加相的迹象。 TEM图像显示,随着晶粒尺寸的增加,退火温度的升高,纳米粒子接近球形,尺寸在1045nm范围内。通过光学吸收测量,在350650℃的温度范围内,ITO纳米粒子的光学直接带隙计算为约3.3940.02eV。随着结晶温度的提高,随着退火温度的提高,光学带隙转移到更高的能量,从而增加了由BursteinMoss效应确定的载流子浓度。

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