Double window partial SOI-LDMOSFET: A novel device for breakdown voltage improvement

摘要

In this paper we propose novel partial silicon on insulator lateral double diffused MOSFET in order to increase breakdown voltage. The key idea in this work is to decrease common peaks near the drain and gate junctions by producing additional peaks. The proposed structure is called double window partial SOI-LDMOSFET (DWP-SOI). The simulation results show that the breakdown voltage of DWP-SOI can be enhanced about two times as compared to conventional SOI-LDMOSFET(C-SOI) and about 70% as compared to conventional SOI-LDMOSFET with a field plate (CF-SOI). The self-heating effect is also improved in the proposed structure because we have used two windows in buried oxide, which provide a heat conduction path from the active region to the substrate.