Spin interference and Fabry-Perot resonances in ferromagnet-semiconductor-ferromagnet devices

摘要

Magneto conductance across permalloy/InAs(2DES)/permalloy double junctions in the ballistic limit is examined within the transfer-matrix formalism. We take into account Rashba spin-orbit interaction in the semiconductor as well as oblique modes in devices of finite widths and calculate conductance ratios DeltaG/(G) over bar between distinct geometries of the magnetizations in the source and drain electrodes. The appropriate spin-dependent boundary conditions yield magnetoconductance ratios DeltaG/(G) over bar of up to 1% and Fabry-Nrot type interferences. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 21]