Quantum capture of electrons and intra-dot relaxation by means of Auger processes in quantum dots

摘要

A theoretical analysis of LO phonon-assisted electron capture and of intra-dot Auger relaxation in quantum dots is presented. The electron capture efficiency is investigated as a function of the lattice temperature and quantum dot radius for different injected electron concentration taking into account the confinement effect for the polar optical phonons in spherical quantum dots. Exact numerical calculations for the phonon-assisted electron capture rate as well as for the Auger scattering rate have been carried out.