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A Second-Order Noise-Shaping SAR ADC Using Two Passive Integrators Separated by the Comparator

机译:使用由比较器分开的两个被动积分器的二阶噪声整形SAR ADC

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摘要

This brief presents a second-order noise-shaping (NS) successive approximation register (SAR) analog-to-digital converter (ADC) with two passive integrators. Due to the separation of the preamplifier, these two integrators become independent of each other and the size of the second integrator can be reduced. The NS SAR also realizes the zeros optimization of the noise transfer function (NTF). The analysis shows the NS performance of the proposed ADC is insensitive to the gain variation of the multipath comparator. To mitigate the harmonic distortion caused by capacitor mismatch, thermometer-code 4-bit MSBs are implemented with data weighted averaging (DWA) technique. The overall architecture is simple and robust, which only requires minor modifications to the standard SAR ADC. A prototype 9-bit NS-SAR ADC is designed and simulated in a 130-nm CMOS process. It consumes $59.9~mu ext{W}$ of power when operating at 2-MS/s sampling frequency. The proposed ADC achieves peak Schreier figure of merits (FoMs) of 171.9 dB with 78.69-dB signal-to-noise-and-distortion ratio (SNDR) at an oversampling ratio (OSR) of 8.
机译:本简述呈现了具有两个无源积分器的二阶噪声整形(NS)连续近似寄存器(SAR)模数转换器(ADC)。由于前置放大器的分离,这两个积分器彼此独立,并且可以减少第二积分器的尺寸。 NS SAR还实现了噪声传递函数(NTF)的零优化。分析表明,所提出的ADC的NS性能对多径比较器的增益变化不敏感。为了减轻电容器不匹配引起的谐波失真,使用数据加权平均(DWA)技术实现温度计码4位MSB。整体架构简单且坚固,这只需要对标准SAR ADC进行微小的修改。在130nm CMOS工艺中设计和模拟原型9位NS-SAR ADC。它消耗<内联公式xmlns:mml =“http://www.w3.org/1998/math/mathml”xmlns:xlink =“http://www.w3.org/1999/xlink”> $ 59.9〜 mu text {w} $

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  • 作者单位

    State Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China;

    State Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China;

    State Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China;

    State Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China;

    State Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China;

    State Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Capacitors; Latches; Registers; Analog-digital conversion; Very large scale integration; Noise shaping; Quantization (signal);

    机译:电容器;闩锁;寄存器;模拟数字转换;非常大规模集成;噪声整形;量化(信号);

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