首页> 外文期刊>Very Large Scale Integration (VLSI) Systems, IEEE Transactions on >Process-Variation Resilient and Voltage-Scalable DCT Architecture for Robust Low-Power Computing
【24h】

Process-Variation Resilient and Voltage-Scalable DCT Architecture for Robust Low-Power Computing

机译:用于稳健的低功耗计算的过程变化弹性和电压可伸缩DCT架构

获取原文
获取原文并翻译 | 示例

摘要

In this paper, we present a novel discrete cosine transform (DCT) architecture that allows aggressive voltage scaling for low-power dissipation, even under process parameter variations with minimal overhead as opposed to existing techniques. Under a scaled supply voltage and/or variations in process parameters, any possible delay errors appear only from the long paths that are designed to be less contributive to output quality. The proposed architecture allows a graceful degradation in the peak SNR (PSNR) under aggressive voltage scaling as well as extreme process variations. Results show that even under large process variations ($pm 3sigma$ around mean threshold voltage) and aggressive supply voltage scaling (at 0.88 V, while the nominal voltage is 1.2 V for a 90-nm technology), there is a gradual degradation of image quality with considerable power savings (71% at PSNR of 23.4 dB) for the proposed architecture, when compared to existing implementations in a 90-nm process technology.
机译:在本文中,我们提出了一种新颖的离散余弦变换(DCT)架构,即使在工艺参数变化的情况下,与现有技术相比,即使在工艺参数变化最小的情况下,也可以实现低功耗的积极电压缩放。在成比例的电源电压和/或过程参数变化的情况下,任何可能的延迟误差仅会出现在设计对输出质量的贡献较小的长路径上。所提出的体系结构允许在激进的电压缩放以及极端的工艺变化下,峰值SNR(PSNR)适度降低。结果表明,即使在较大的工艺变化(平均阈值电压附近为$ pm 3sigma $)和激进的电源电压缩放比例(0.88 V,而对于90nm技术,标称电压为1.2 V)下,图像也会逐渐退化与90纳米制程技术中的现有实现方案相比,所提出的体系结构具有很高的质量节省(在23.4 dB的PSNR时为71%)。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号