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首页> 外文期刊>IEEE transactions on very large scale integration (VLSI) systems >Configurable Input–Output Power Pad for Wafer-Scale Microelectronic Systems
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Configurable Input–Output Power Pad for Wafer-Scale Microelectronic Systems

机译:晶圆级微电子系统的可配置输入-输出功率垫

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摘要

We describe, in this paper, a new digital input-output power configurable PAD (CPAD) for a wafer-scale-based rapid prototyping platform for electronic systems. This wafer-scale platform includes a reconfigurable wafer-scale circuit that can interconnect any digital components manually deposited on its active alignment-insensitive surface. The whole platform is powered using a massive grid of embedded voltage regulators. Power is fed from the bottom side of the wafer using through silicon vias. The CPAD can be configured to provide CMOS standard voltages of 1.0, 1.5, 1.8, 2.0, 2.5, and 3.3 V using a single 3.3 V power supply. The digital I/O includes transistors sharing and is embedded within the regulation circuit by combining it with a turbo mode that insures high-speed operation. Fast load regulation is achieved with a 5.5-ns response time to a current step load for a maximum current of 110 mA per CPAD. The proposed circuit architecture benefits from a hierarchical arborescence topology where one master stage drives 16 CPADs with a very small quiescent current of 366 nA. The CPAD circuit and the master stage occupy a small area of 0.00847 and 0.00726 ${rm mm}^{2}$, respectively, in CMOS 0.18-$mu{rm m}$ technology.
机译:我们在本文中描述了一种新的数字输入/输出功率可配置PAD(CPAD),用于基于晶片规模的电子系统快速原型开发平台。该晶圆级平台包括一个可重配置的晶圆级电路,该电路可以互连手动沉积在其主动不对准表面上的任何数字组件。整个平台使用庞大的嵌入式稳压器网格供电。使用硅通孔从晶片的底侧馈电。可使用单个3.3 V电源将CPAD配置为提供1.0、1.5、1.8、2.0、2.5和3.3 V的CMOS标准电压。数字I / O包含共享的晶体管,并通过将其与确保高速操作的Turbo模式结合在一起而嵌入到调节电路中。通过对电流阶跃负载的5.5 ns响应时间实现快速负载调节,每个CPAD的最大电流为110 mA。所提出的电路架构得益于分级树状拓扑结构,其中一个主级以366 nA的非常小的静态电流驱动16个CPAD。 CPAD电路和主级仅占0.00847和0.00726的较小区域。 $ {rm mm} ^ {2} $ ,分别使用CMOS 0.18- $ mu {rm m} $ 技术。

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