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首页> 外文期刊>Very Large Scale Integration (VLSI) Systems, IEEE Transactions on >Current-Comparison-Based Domino: New Low-Leakage High-Speed Domino Circuit for Wide Fan-In Gates
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Current-Comparison-Based Domino: New Low-Leakage High-Speed Domino Circuit for Wide Fan-In Gates

机译:基于电流比较的多米诺:适用于宽扇入门的新型低泄漏高速多米诺电路

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摘要

In this paper, a new domino circuit is proposed, which has a lower leakage and higher noise immunity without dramatic speed degradation for wide fan-in gates. The technique which is utilized in this paper is based on comparison of mirrored current of the pull-up network with its worst case leakage current. The proposed circuit technique decreases the parasitic capacitance on the dynamic node, yielding a smaller keeper for wide fan-in gates to implement fast and robust circuits. Thus, the contention current and consequently power consumption and delay are reduced. The leakage current is also decreased by exploiting the footer transistor in diode configuration, which results in increased noise immunity. Simulation results of wide fan-in gates designed using a 16-nm high-performance predictive technology model demonstrate 51% power reduction and at least $2.41times$ noise-immunity improvement at the same delay compared to the standard domino circuits for 64-bit OR gates.
机译:本文提出了一种新的多米诺骨牌电路,该电路具有较低的泄漏和较高的抗扰性,而对于宽扇入式浇口却没有明显的速度下降。本文中使用的技术基于上拉网络的镜像电流与其最坏情况下的漏电流的比较。所提出的电路技术减少了动态节点上的寄生电容,从而为宽扇入门提供了一个较小的保持器,以实现快速而稳定的电路。因此,减少了竞争电流,从而降低了功耗和延迟。通过利用二极管配置中的脚注晶体管,还可减少泄漏电流,从而提高了抗噪能力。与64位OR的标准多米诺电路相比,采用16纳米高性能预测技术模型设计的宽扇入式门的仿真结果表明,在相同的延迟下,功耗降低了51%,噪声抗扰性提高了51%,至少提高了2.41倍。盖茨。

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