首页> 外文期刊>IEEE transactions on very large scale integration (VLSI) systems >A Capacitor-Less LDO With High-Frequency PSR Suitable for a Wide Range of On-Chip Capacitive Loads
【24h】

A Capacitor-Less LDO With High-Frequency PSR Suitable for a Wide Range of On-Chip Capacitive Loads

机译:具有高频PSR的无电容LDO,适用于各种片上电容性负载

获取原文
获取原文并翻译 | 示例
           

摘要

This paper presents an on-chip, low drop-out (LDO) voltage regulator with improved power-supply rejection (PSR) able to drive large capacitive loads. The LDO compensation is achieved via a custom, wide bandwidth capacitance multiplier (c-multiplier) that emulates a nanofarad-range capacitance at the LDO output node. The LDO frequency response resembles that of externally compensated LDOs, leading to a wide PSR frequency range without using an off-chip capacitor. To drive large capacitive loads without stability concerns, the supply-line capacitance of the load circuit is incorporated to the design of the LDO compensation scheme. The power-stability-performance tradeoffs involved in the design are discussed in detail. The LDO and the c-multiplier are implemented in 0.18-μm CMOS technology and target applications with load currents in the 10-mA range. Experimental results show that the LDO achieves a PSR better than -39 dB up to 20 MHz at 1.2 V output voltage, while maintaining a 97.4% current efficiency.
机译:本文提出了一种片上低压降(LDO)稳压器,该稳压器具有改进的电源抑制(PSR)能力,能够驱动大容性负载。 LDO补偿是通过定制的宽带电容倍增器(c倍增器)来实现的,该乘数模拟LDO输出节点处的纳法范围电容。 LDO的频率响应类似于外部补偿LDO的频率响应,从而无需使用片外电容器即可实现较宽的PSR频率范围。为了驱动大容性负载而无需担心稳定性,负载电路的电源电容被纳入LDO补偿方案的设计中。详细讨论了设计中涉及的功率稳定性-性能折衷。 LDO和c乘法器采用0.18μmCMOS技术实现,目标应用是负载电流在10mA范围内。实验结果表明,在输出电压为1.2 V时,LDO在20 MHz时的PSR优于-39 dB,同时保持97.4%的电流效率。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号