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Racetrack Memory-Based Nonvolatile Storage Elements for Multicontext FPGAs

机译:用于多上下文FPGA的基于赛道存储器的非易失性存储元件

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A multicontext field-programmable gate array (FPGA) is a solution to achieve fast run-time reconfiguration. However, SRAM-based multicontext FPGAs still suffer from high leakage power during sleep, slow power-ON speed, and excessive large memory area. Racetrack memory is one of the most promising resistive nonvolatile memories, with the advantages of low power, high density, and high speed. In this paper, we propose two racetrack memory-based nonvolatile storage elements (NVSEs) for multicontext FPGAs. One is the shifting-based NVSE (type-1) with the advantages of high density and low power. The other one is the address-based NVSE (type-2) with the advantages of high context switching speed and low context switching power. The versatile place and route simulation results show that the type-1 NVSE-based eight-context FPGA reduces the area, critical path delay, and the power of the SRAM-based eight-context FPGA by more than 68.1%, 22.8%, and 13%, respectively. The proposed type-2 NVSE-based FPGAs allow the contexts to be switched 4.46 times faster than the type-1 NVSE-based FPGAs. Both designs improve the FPGA power-ON speed by more than a million times. Compared with the conventional racetrack memory-based lookup table (LUT), the proposed racetrack memory-based LUT may reduce the total power by more than 25%.
机译:多上下文现场可编程门阵列(FPGA)是实现快速运行时重新配置的解决方案。但是,基于SRAM的多上下文FPGA仍在睡眠期间遭受高泄漏功率,缓慢的开机速度以及过大的存储区域的困扰。跑道存储器是最有前途的电阻式非易失性存储器之一,具有低功耗,高密度和高速的优点。在本文中,我们为多上下文FPGA提出了两个基于赛道存储器的非易失性存储元件(NVSE)。一种是基于移位的NVSE(类型1),具有高密度和低功耗的优点。另一个是基于地址的NVSE(类型2),具有高上下文切换速度和低上下文切换功率的优点。通用的布局和路线仿真结果表明,基于类型1的NVSE的八上下文FPGA将面积,关键路径延迟和基于SRAM的八上下文FPGA的功耗降低了68.1%,22.8%和分别为13%。所提议的基于2类NVSE的FPGA的上下文切换速度比基于1类NVSE的FPGA快了4.46倍。两种设计均可将FPGA的上电速度提高一百万倍以上。与传统的基于赛道存储器的查找表(LUT)相比,建议的基于赛道存储器的LUT可以将总功耗降低25%以上。

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