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Toward Solving Multichannel RF-SoC Integration Issues Through Digital Fractional Division

机译:通过数字小数分部解决多通道RF-SoC集成问题

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In modern RF system on chips (SoCs), the digital content consumes up to 85% of the IC chip area. The recent push to integrate multiple RF-SoC cores is met with heavy resistance by the remaining RF/analog circuitry, which creates numerous strong aggressors and weak victims leading to RF performance degradation. A key such mechanism is injection pulling through parasitic coupling between various -tank oscillators as well as between them and strong transmitter (TX) outputs. Any static or dynamic frequency proximity between aggressors (i.e., oscillators and TX outputs) and victims (i.e., oscillators) that share the same die causes injection pulling, which produces unwanted spurs and/or modulation distortion. In this paper, we propose and demonstrate a new frequency planning technique of a multicore TX where each -tank oscillator is separated from other aggressors beyond its pulling range. This is done by breaking the integer harmonic frequency relationship of victims/aggressors within and between the RF transmission channels using digital fractional divider based on a phase rotation. Each oscillator’s center frequency can be fractionally separated by % but, at the same time, both producing closely spaced frequencies at the phase rotator outputs. The injection-pulling spurs are so far away that they are insignificantly small (−80 dBc) and coincide with the second harmonic of the carrier. This method is experimentally verified in a two-channel system in 65-nm digital CMOS, each channel comprising a high-swing class-C oscillator, frequency divider, and phase rotator
机译:在现代的RF片上系统(SoC)中,数字内容最多消耗IC芯片面积的85%。剩余的RF /模拟电路为集成多个RF-SoC内核的最新努力带来了沉重的阻力,这造成了许多强大的攻击者和脆弱的受害者,导致RF性能下降。这种机制的关键是注入会拉过各种容器振荡器之间以及它们与强发射器(TX)输出之间的寄生耦合。攻击者(即振荡器和TX输出)与受害者(即振荡器)共享同一裸片之间的任何静态或动态频率接近都会导致注入拉动,这会产生不必要的杂散和/或调制失真。在本文中,我们提出并演示了一种多核TX的新频率规划技术,其中,每个槽式振荡器与超出其上拉范围的其他干扰器都分开。这是通过使用基于相位旋转的数字小数分频器打破RF传输通道之内和之间的受害者/攻击者的整数谐波频率关系来完成的。每个振荡器的中心频率可以小数百分比分隔,但同时,两者在相位旋转器的输出端都产生紧密间隔的频率。注入-拉动杂散距离太远,以至于它们很小(-80 dBc),并且与载波的二次谐波一致。该方法在65纳米数字CMOS的两通道系统中进行了实验验证,每个通道均包含一个高摆幅C类振荡器,分频器和相位旋转器

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