High-Density and High-Reliability Nonvolatile Field-Programmable Gate Array With Stacked 1D2R RRAM Array

摘要

The huge area overhead of the interconnect is one of the critical issues in static random access memory (SRAM)-based field-programmable gate arrays (FPGAs), resulting in high power consumption and slow operation speed. Another critical issue is the volatile feature of the SRAM, which leads to high standby leakage current and long power-ON time. Resistive random access memory (RRAM) with a high resistance ratio and zero standby power possesses great potential in the FPGA applications. The conventional RRAM-based nonvolatile FPGAs (NVFPGAs) may use one-transistor 2-RRAM (1T2R) storage element to replace the SRAM or the one RRAM (1R) cell to replace both nMOS switch and SRAM. However, those NVFPGA schemes may suffer from the issues of low reliability, high configuration power, and high active leakage power. In this paper, we propose a novel element [one-diode two-RRAM (1D2R) cells] to replace the nMOS switch and 6 Transistors (6T) SRAM. Meanwhile, the novel block structures of the logic block, connection block, switch block, and the FPGA architecture based on the 1D2R element are proposed. Compared with the conventional 1T2R-based NVFPGA, our novel structure could improve the operation speed by 53% with a 40.5% lower operation power. Compared with the conventional 1R-based NVFPGA, the proposed scheme could greatly reduce the write error rate by eight orders with more than 20 times lower write power.