高濃度オゾンによるSiC高速酸化と酸化膜の特性評価

摘要

炭化珪素（SiC）は，同じ半導体材料であるシリコンに比rnべて，大きなバンドギャップ，高い熱伝導率，高い飽和電子rnドリフト速度，高い絶縁破壊電圧といった優れた特徴を有rnするため，次世代の低損失パワーデバイス用材料として注目されている．%The highly concentrated (almost 100 vol.%) ozone gas has been utilized to dry oxidation of SiC single crystal substrates by using a quartz furnace with local heating by a halogen heater. When the flow velocity of ozone was kept as high as 5 m·cm~(-1) or more, the strong oxidizing power of ozone enabled rapid oxidation of SiC at a considerably lower temperature than that for the oxidation in oxygen. The ozone oxidation also resulted in a lower interface state density in the device charactrization for the MOS structure probably because the ozone oxidation was effective in reducing carbon-related defects.