大面積透明フレキシブルオールGaドープZnO抵抗変化メモリ（ReRAM）の作製と評価

摘要

電子デバイス，特にディスプレイやコンピュータの分野でrnは透明化と薄型化，フレキシブル化が急速に進められておrnり，そのようなデバイスの実現には透明でフレキシブルなメrnモリ素子の実現が不可欠である．メモリ層にZnO等のワイrnドバンドギャップ酸化物半導体を用い，透明電極［インジウrnム酸化スズ（ITO）等の酸化物電極］と組み合わせることで，rn透明な抵抗変化メモリ（ReRAM）の実現が可能である.%Fabrication of Flexible Transparent Resistive Random Access Memory (FT-ReRAM) which consists of Ga-doped ZnO (GZO) film not only as a memory layer but also as electrodes on the large Poly Ethylene Naphthalate (PEN) sheet was attained by introducing RF plasma assist DC magnetron sputtering method. The averaged transmittance in the visible region (400-800 nm) was 72%. The resistance change effect without morphological change was confirmed by using conducting atomic force microscope (C-AFM). Stable and repeatable bi-polar resistive switching by applying the voltage less than 2.5 V was confirmed in the all-GZO-FT-ReRAM. The present work showed the high applicability of the all-GZO-FT-ReRAM to achieve flexible transparent devices for the next generation.