Annealing of vacancy-type defects in irradiated InP crystals

摘要

Positron annihilation and the Hall effect in n-InP crystals as a function of electron irradiation up to 1·10~18 cm~-2 and post-irradiated isochronal annealing up to 600°C are studied. Vacancies with a concentration of about 10~19 cm~-3 are observed in electron-irradiated InP crystals. Vacancy defects are annealled out in two stages at 50 - 200°C and 250-450°C.