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首页> 外文期刊>Украинский физический журнал >DIRECT-WRITE e-BEAM PERIODICALLY POLED ~400 nm DOMAINS IN LITHUIM NIOBATE THIN FILMS GROWN BY LIQUID PHASE EPITAXY
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DIRECT-WRITE e-BEAM PERIODICALLY POLED ~400 nm DOMAINS IN LITHUIM NIOBATE THIN FILMS GROWN BY LIQUID PHASE EPITAXY

机译:液相液相法生长的铌酸锂薄层膜中的周期性直接电子束〜400 nm膜

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摘要

We demonstrate sub-micron ferroelectric domain engineering in liquid phase epitaxy (LPE) LiNbO_3 thin films grown on LiNbO_3 and LiTaO_3 substrates using a direct-write electron beam poling method. LiNbO_3 thin films of several-micron thicknesses were grown using a flux melt of 20 mol% LiNbO_3—80 mol% LiVO_3. To engineer domain structures in Z~- oriented LPE LiNbO_3 films, a direct-write electron beam poling method was implemented. We achieved 300—400 nm wide domains spanning over 50 μm with a period of 1.1 μm. It is also shown that we can engineer the domain structure of LPE LiNbO_3 films by using direct e-beam poling, even though the domain orientations of the film and the substrate are of opposite polarity. By comparing the e-beam poling behavior in a congruent LiNbO_3 single crystal and a LPE LiNbO_3 film, it is shown that LPE LiNbO_3 supports a much enhanced periodically poled structure than bulk single crystal material.
机译:我们展示了使用直接写入电子束极化方法在LiNbO_3和LiTaO_3衬底上生长的液相外延(LPE)LiNbO_3薄膜中的亚微米铁电畴工程。使用20 mol%LiNbO_3–80 mol%LiVO_3的熔剂熔体生长了几微米厚的LiNbO_3薄膜。为了在Z〜取向LPE LiNbO_3薄膜中设计畴结构,实现了直接写入电子束极化方法。我们获得了300-400 nm宽域,跨度超过50μm,周期为1.1μm。还表明,即使膜和基板的畴取向具有相反的极性,我们也可以通过使用直接电子束极化来设计LPE LiNbO_3膜的畴结构。通过比较一致的LiNbO_3单晶和LPE LiNbO_3膜中的电子束极化行为,可以看出LPE LiNbO_3与块状单晶材料相比,具有更强的周期性极化结构。

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