Structural, electrical and surface morphological studies of Cd₂SnO₄ and Mg doped Cd₂SnO₄ thin films

摘要

The technologically important conductive Cadmium stannate (Cd₂SnO₄) and Magnesium doped cadmium stannate (Cd₂SnO₄: Mg) thin films were prepared using Cadmium acetate and stannous chloride by spray pyrolysis technique. Films prepared are crystalline and have cubic CdO phase with SnO₂. The X-ray diffraction patterns of both thin films shows perfect crystalline structure and from the data, the particle diameter of both films were calculated. Atomic Force Microscopy (AFM) of both films reveals the uniform thickness of the films and the presence of uniform grain growth in Cd₂SnO₄ and Mg doped Cd₂SnO₄ thin films. Thickness of Cadmium stannate film is 725nm and that of Magnesium doped Cadmium stannate film is 285nm. The indirect band gap energy of Cd₂SnO₄ film is 2.71eV and for magnesium doped Cd₂SnO₄ is 2.97eV were observed from the UV-Visible absorption spectrum studies. Presence of uniform grain growth is found in both thin films. The doping of Magnesium in Cadmium stannate film improves the electrical properties without affecting its structural properties.