Low temperature dielectric study on swift heavy ion irradiated 6H-SiC crystals

摘要

The effect of 150 MeV Ag12+ ion irradiation on the electrical behavior of 6H-SiC crystals has been studied by impedance spectroscopy. The study was carried out on the pristine, 8 ′ 1012 ions/cm2 and irradiated at 300 K and 80 K respectively. The present study elucidates the divergence of defect introduction due to irradiation at different temperatures through the electric polarizability and conductivity. The frequency and temperature dependent dielectric dispersions observed for the sample irradiated with 8 × 1012 ions/cm2 at 300 K are observed to be more than those of the sample irradiated at 80 K. The study reflects that more defects are produced in the case of 8 × 1012 ions/cm2 at 300 K irradiated sample than the sample irradiated with 8 × 1012 ions/cm2 at 80 K. The ac conductivity measured at 1 kHz over a temperature range from 100 – 300 K showed that complex defects are produced at 300 K for the swift heavy ion irradiated samples.