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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research >Effect of swift heavy ion beam irradiation on the dielectric and ferroelectric properties of pure and cobalt doped TGS crystals
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Effect of swift heavy ion beam irradiation on the dielectric and ferroelectric properties of pure and cobalt doped TGS crystals

机译:快速重离子束辐照对纯钴掺杂TGS晶体介电和铁电性能的影响

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摘要

Effect of swift heavy ion (100 MeV O~(7+) ion) beam irradiation on the temperature and frequency dependence of real (ε') and imaginary (ε″) parts of dielectric permittivity in pure and Co~(2+) doped TGS crystals are analyzed. Irradiation with swift heavy ion beam changes the dielectric response considerably. Observed dielectric peak in irradiated crystals shifts towards lower temperature and broadens up; the reduction in peak value, shift in temperature and broadening changes systematically with fluence. The most interesting results of SHI irradiation are (i) the dielectric loss peak value (e″_(max)) in all crystals is invariably less in comparison to the value in unirradiated crystals (ii) the minimum value of dielectric loss peak (e″_(max)) occurs at different fluence in different crystals, and (iii) a second loss peak is observed below T_c in CTGS10 especially at higher fluence. It seems that irradiation creates/strengthens internal field in the crystals by orienting the domains through some mechanism that is not clear at present. The observed results could be explained if one presumes that irradiation annihilate the defects already present in the crystals by creating local charges and thermal gradient resulting into internal bias field. Ferroelectric hysteresis loops demonstrate the internal bias field developing in the SHI irradiated crystals. It is argued that SHI irradiation is a better alternate in comparison to cobalt doping in inhibiting dipolar switching in TGS crystal.
机译:快速重离子(100 MeV O〜(7+)离子)辐照对纯和Co〜(2+)掺杂介电常数的实数(ε')和虚数(ε'')的温度和频率依赖性的影响分析了TGS晶体。快速的重离子束照射大大改变了介电响应。在辐照晶体中观察到的介电峰向较低温度移动并扩大;峰值的减少,温度的变化和扩大的影响都可以有系统地变化。 SHI辐照的最有趣的结果是(i)与未经辐照的晶体相比,所有晶体中的介电损耗峰值(e''_(max))始终较小(ii)介电损耗峰的最小值(e ” _(max))以不同的注量在不同的晶体中发生,并且(iii)在CTGS10中的T_c以下观察到第二个损失峰,尤其是在较高的注量时。辐射似乎通过目前尚不清楚的机制来定向晶畴,从而在晶体中创建/加强了内部场。如果一个人假设辐照通过产生局部电荷和热梯度导致内部偏置场消除了晶体中已经存在的缺陷,则可以解释观察到的结果。铁电磁滞回线表明在SHI辐照晶体中产生了内部偏置场。有人认为,与钴掺杂相比,SHI辐照在抑制TGS晶体的偶极转换方面是更好的选择。

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