Growth of VO_2 films with metal-insulator transition on silicon substrates in inductively coupled plasma-assisted sputtering

摘要

Single-phase monoclinic vanadium dioxide (VO_2) films were grown on a Si(100) substrate using inductively coupled plasma (ICP)-assisted sputtering with an internal coil. The VO_2 film exhibited metal-insulator (M-I) transition at around 65℃ with three orders of change in resistivity, with a minimum hysteresis width of 2.2℃. X-ray diffraction showed structural phase transition (SPT) from monoclinic to tetragonal rutile VO_2. For conventional reactive magnetron sputtering, vanadium oxides with excess oxygen (V_2O_5 and V_3O_7) could not be eliminated from stoichiometric VO_2. Single-phase monoclinic VO_2 growths that are densely filled with smaller crystal grains are important for achieving M-I transition with abrupt resistivity change.