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Influence of substrate bias on microstructural evolution and mechanical properties of TiAlSiN thin films deposited by pulsed-DC magnetron sputtering

机译:衬底偏压对脉冲直流磁控溅射沉积TiAlSiN薄膜微结构演变和力学性能的影响

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Substrate bias is one of the many factors, influencing the microstructure and, thus, properties of physical vapor deposition coatings. The aim of this study is to investigate the effect of varying substrate bias on the microstructure and mechanical properties of TiAISiN coatings deposited on M42 tool steel substrates at 500 degrees C by a pulsed DC close-field unbalanced magnetron sputtering system (CFUBMS). The microstructure of the as-deposited coatings was characterized by a range of techniques, including transmission electron microscopy, glancing angle Xray diffraction and X-ray photoelectron spectroscopy. In addition, nanoindentation measurements were conducted to evaluate the mechanical properties of these coatings. It was found that an increase in substrate bias imposed minimal effects on the composition of the as-deposited TiAISiN coatings, but had a significant influence on both the phase composition and microstructure of the coatings. As the substrate bias voltage increased from -40 to -80 V, a transition from zone-2 type structure to zone-3 type structure was observed, together with a reduction of the width of columnar grain from similar to 180 to similar to 60 nm. There was also a structural transition from a mixed fcc TiN + fcc AIN phases into a single fcc TiA1N phase as the negative substrate bias was increased above 60 V. Hardness and modulus were observed to increase with increasing bias voltage. Solid solution hardening and Hall-Fetch effects are believed to be responsible for the hardness improvement. (C) 2017 Elsevier B.V. All rights reserved.
机译:基材偏压是影响物理气相沉积涂层的微观结构并进而影响其性能的众多因素之一。这项研究的目的是研究脉冲直流近场不平衡磁控溅射系统(CFUBMS)在500摄氏度下变化的衬底偏压对沉积在M42工具钢衬底上的TiAISiN涂层的组织和力学性能的影响。沉积涂层的微观结构通过一系列技术进行了表征,包括透射电子显微镜,掠射角X射线衍射和X射线光电子能谱。另外,进行了纳米压痕测量以评估这些涂层的机械性能。已经发现,基底偏压的增加对沉积的TiAlSiN涂层的组成影响最小,但是对涂层的相组成和微观结构都有显着影响。当衬底偏置电压从-40 V增加到-80 V时,观察到从2区型结构过渡到3区型结构,同时柱状晶粒的宽度从大约180 nm减小到大约60 nm 。随着负衬底偏置电压增加到60 V以上,从混合的fcc TiN + fcc AIN相到单fcc TiAlN相也发生了结构过渡。观察到硬度和模量随偏置电压的增加而增加。据信固溶硬化和霍尔效应(Hall-Fetch)是造成硬度提高的原因。 (C)2017 Elsevier B.V.保留所有权利。

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